SnS2的化學(xué)氣相沉積法制備及光電特性

編號(hào)：FTJS09824

篇名：SnS2的化學(xué)氣相沉積法制備及光電特性

作者：南亞新 堅(jiān)佳瑩 董芃凡 耿銘濤 常芳娥

關(guān)鍵詞： 二硫化錫 化學(xué)氣相沉積法 光電探測(cè)器 光電特性

機(jī)構(gòu)： 西安工業(yè)大學(xué)陜西省光電功能材料與器件重點(diǎn)實(shí)驗(yàn)室 西安工業(yè)大學(xué)電子信息工程學(xué)院

摘要： The study aims to improve the photoelectric properties of photodetectors,enabling them to have a wider spectral response range and to detect weak light signals.With SnO 2 and S powder as raw materials,SnS2film was prepared on sapphire substrates by chemical vapor deposition(CVD)and the photodetectors based on CVD SnS2were fabricated by dry transfer method.Their photoelectric properties at different wavelengths,light intensities and bias voltages were tested.The results show that the SnS2obtained was irregular sheets of 20~30μm.SnS2based photodetectors had different responses in the wavelength range of 250~850 nm,with the highest response at roughly 440 nm.Under the[JP+1]irradiation of 520 nm laser,their responsivity,detectability,rise time and fall time were 42.52 mA·W-1,[JP]1.83×1011 cm·Hz 1/2·W-1,[JP]37 ms and 66 ms,respectively.As an environmentally friendly material with a large band gap,SnS2will provide a reference for designing the next generation of high performance photodetectors.