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高純碲：99.999% Te-5N-L-1

檢測(cè)雜質(zhì)：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si

雜質(zhì)總含量：≤10ppm

高純碲：99.9999% Te-6N-L-2

檢測(cè)雜質(zhì)：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

雜質(zhì)總含量：≤1ppm

高純碲：99.99999% Te-7N-L-3

檢測(cè)雜質(zhì)：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

雜質(zhì)總含量：≤0.1ppm

用途：主要用于制備Ⅱ-Ⅵ族化合物半導(dǎo)體、熱點(diǎn)轉(zhuǎn)換元件、致冷元件、壓電晶體和紅外探測(cè)器，太陽(yáng)能電池材料等。

包裝：滌綸薄膜包裝后雙層復(fù)合膜抽真空包裝兩次，{外套復(fù)合鋁箔內(nèi)充氬氣封裝}或者直接玻璃管真空封裝。

Specification:

High purity Te: 99.999% Te-5N-L-1

Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si

Totalimpurity content: ≤10ppm

High purity Te: 99.9999% Te-6N-L-2

Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

Totalimpurity content: ≤1ppm

High purity Te: 99.99999% Te-7N-L-3

Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

Totalimpurity content: ≤0.1ppm

Application: Use for preparation Ⅱ-Ⅵ elementschemical compound semiconductor, thermo-electricity transfer cell,refrigerating cell, piezoelectric crystal and infrared detector. Used as thematerial of solar cell etc…

Package: Packed with terylene film, and doublepoly-film with vacuum encapsulation, do this twice, then packed with aluminumfoil with argon encapsulation, or packed with glass tube with vacuumencapsulation directly.