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ETD-2000MH型磁控等離子濺射儀。

磁控濺射的工作原理是指電子在電場E的作用下，在飛向基片過程中與氬原子發(fā)生碰撞，使其電離產(chǎn)生出Ar正離子和新的電子；新電子飛向基片，Ar離子在電場作用下加速飛向陰極靶，并以高能量轟擊靶表面，使靶材發(fā)生濺射。

在濺射粒子中，中性的靶原子或分子沉積在基片上形成薄膜，而產(chǎn)生的二次電子會(huì)受到電場和磁場作用，產(chǎn)生E（電場）×B（磁場）所指的方向漂移，簡稱E×B漂移，其運(yùn)動(dòng)軌跡近似于 磁控濺射 磁控濺射 一條擺線。若為環(huán)形磁場，則電子就以近似擺線形式在靶表面做圓周運(yùn)動(dòng)，它們的運(yùn)動(dòng)路徑不僅很長，而且被束縛在靠近靶表面的等離子體區(qū)域內(nèi)，并且在該區(qū)域中電離出大量的Ar 來轟擊靶材，從而實(shí)現(xiàn)了高的沉積速率。隨著碰撞次數(shù)的增加，二次電子的能量消耗殆盡，逐漸遠(yuǎn)離靶表面，并在電場E的作用下*終沉積在基片上。由于該電子的能量很低，傳遞給基片的能量很小，致使基片溫升較低。

磁控濺射是入射粒子和靶的碰撞過程。入射粒子在靶中經(jīng)歷復(fù)雜的散射過程，和靶原子碰撞，把部分動(dòng)量傳給靶原子，此靶原子又和其他靶原子碰撞，形成級(jí)聯(lián)過程。在這種級(jí)聯(lián)過程中某些表面附近的靶原子獲得向外運(yùn)動(dòng)的足夠動(dòng)量，離開靶被濺射出來。

配有高位定性的飛躍真空泵

ETD-2000MH magnetron plasma sputtering instrument.

The principle of magnetron sputtering is that the electrons collide with the argon atom in the process of flying to the substrate under the action of the electric field E， and make the ionization produce Ar positive ions and new electrons; the new electrons fly to the substrate， the Ar ion accelerates to the cathode target under the action of the electric field， and bombards the target surface with high energy to make the target sputtering.

In the sputtering particles， the neutral target atoms or molecules are deposited on the substrate to form a film， and the two electrons produced are affected by the electric field and the magnetic field. The direction drift of the E (electric field) * B (magnetic field)， referred to as E x B drift， is similar to the magnetron sputtering of a cycloid. If a circular magnetic field is used， the electrons are circumferential on the surface of the target in the form of an approximate cycloid. Their motion path is not only long， but also bound to the plasma area near the target surface， and a large number of Ar are ionized in the region to bombard the target， thus achieving high deposition rate. As the number of collisions increases， the energy of the two electrons is depleted away and gradually away from the target surface， and finally deposited on the substrate under the action of electric field E. Because the energy of the electron is very low， the energy transferred to the substrate is very small， causing the substrate temperature rise to be low.

Magnetron sputtering is a collision process between incident particles and targets. The incident particles experience complex scattering process in the target， and collide with the target atoms， and transfer partial momentum to the target atom. The target atom collide with other target atoms and forms a cascade process. In this cascade process， the target atoms near some surfaces get enough momentum to move outward and sputter out of the target.

Vacuum pump equipped with high quality

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