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美國樣本
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◆Top detector 1mm x1mm InSb photodiode
# Amplifier DC to 1MHz BW 40,000 V/A transimpedance
# D* > 1.0 E11 Jones
◆Bottom Detector 1mm x1mm HgCdTe photodiode Amplifier DC to 1MHz BW and 10,000 V/A transimpedance
# D* > 3 E10 Jones
# Cutoff wavelength > 11um
■ Series KMPC MCT Photoconductive Infrared Detectors
◆Nominal bandwidth 1MHz ◆350 ns rise time ◆Extended spectral range to 20 mm ◆Convenient integral amplifier ◆Low noise: 1.5dB NF ◆Custom configurations available |
Model * | Wavelength(μm) Peak Cutoff | Size (mm) | Bandwidth(Hz) | D*(60FOV) (Jones, typ) | Responsivity (Volts/mWatt) |
KMPCP11-1-J1 | 11 >12 | 1 x 1 | 1M | 2.00E+10 | 500 with amplifier |
KMPC12-2-A | 12 >13 | 2 x 2 | 2.00E+10 | 1 | |
KMPC12-1-A | 12 >13 | 1 x 1 | 2.00E+10 | 3 | |
KMPC14-1-A | 14 >15 | 1 x 1 | 2.00E+10 | 2 | |
KMPC16-1-A | 16 >20 | 1 x 1 | 1.00E+10 | 1 |
■ Amplifiers for KV104 series HgCdTe photodiodes
Model | Type | Gain | Bandwidth | Output |
KA020-A1A | TIA + bias | 1E4 V/A | 100 Hz 20MHz | 20V p-p |
KA020-A1 | TIA + bias | 1E4 V/A | DC 20 MHz | 20 V p-p |
KA050-A1 | TIA + bias | 4E3 V/A | DC 50 MHz | 20 V p-p |
KA100-A1 | TIA + bias | 4E3 V/A | DC 100 MHz | 8 V p-p |
■ Amplifiers for KMPC series HgCdTe photoconductors
Model | Type | Gain | Bandwidth | Output |
KA-S3 | TIA + bias | 1E4/Rd V/V | 20 Hz 300 kHz | 20 V rms |
KA-S4 | TIA + bias | 1E4/Rd V/V | 20 Hz 500 kHz | 20 V rms |
KA-S5 | TIA + bias | 1E4/Rd V/V | 20 Hz 1 MHz | 20 V rms |
■ Amplifiers for KISD series InSb photodiodes
Model | Type | Gain | Bandwidth | Output |
KA020-C1 | TIA + bias | 1E4 V/A | DC 10 MHz | 20 V p-p |
KA05-C1 | TIA + bias | 5E4 V/A | DC 5 MHz | 20 V p-p |
KA03-C1 | TIA + bias | 1E5 V/A | DC 3 MHz | 20 V p-p |
KA01-E6-AG | Adj. gain 1-2-5-10 step+bias | 1E5 1E7 V/A | DC 1 MHz | 20 V p-p |
■ Post Amplifiers: Gain and Line Drivers
Model | Type | Gain | Bandwidth | Output |
KA100-E1 | Buffer | 1 V/V | DC 100 MHz* | 20 V p-p |
KA100-E2 | Buffer | 20 V/V | DC 100 MHz* | 20 V p-p |
KA100-E3 | Buffer | 2 V/V | DC 100 Hz* | 20 V p-p |
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